INME RAS
Institute of Nanotechnology of Microelectronics of the Russian Academy of Sciences 
Determining the state of non-volatile memory cells with floating gate using scanning probe microscopy
02.12.2013
Milovanov R., Hanzii D., Zubov D., Kelm E., Luapunov N., Molodsova G., Yanul M. Determining the state of non-volatile memory cells with floating gate using scanning probe microscopy // Proc. SPIE 8700, Internatonal Conference Micro- and Nanoelectronics 2012, January 8, 2013.
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